| PART |
Description |
Maker |
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| K7N801801M |
256Kx36 & 512Kx18 Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| GVT71256ZC36 |
(GVT7xxxx) 256Kx36/512Kx18 Pipelined SRAM With Nobltm Architecture
|
Cypress Semiconductor
|
| K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7A803600MNBSP K7A801800MNBSP K7A803600M K7A801800 |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7B803625B K7B801825B |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A803600B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM718V987 KM736V887 |
256KX36 & 512KX18 SYNCHRONOUS SRAM
|
Samsung Electronic
Samsung semiconductor
|
| K7N801809A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
